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NASDAQ: Navitas Investor Meeting Sep’22

Virtual

Navitas co-founder and CEO, Gene Sheridan, and CFO Ron Shelton will detail how gallium nitride (GaN) and silicon carbide (SiC) power semiconductors replace legacy silicon chips to address a $22B/year market by 2026 and enable a 6 Gton/year reduction in CO2e emissions by 2050. This in-person event at NASDAQ’s 4 Times Square location in New York from 1pm to 4pm EDT, with a formal presentation followed by live Q&A and live hardware demonstrations including ultra-fast mobile charging, data center, EV and motor drive applications. For those unable to attend in-person, the presentation and Q&A will be available via livestream. Attendees should register (password = pureplay) and indicate preference for in-person or live-stream. Click the PDF below to view our presentation.

EPE 2022 ECCE Conference

Leibniz University Hannover Hannover

GaNFast™ power ICs, use next-generation gallium nitride (GaN) to integrate power, drive, and control to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026. Navitas’ next generation of devices – GaNFast with GaNSense™ - now enables even higher efficiency, autonomy, and reliability with precision sensing of system current, voltage and temperature with real-time control and protection. Implementing integrated loss-less current sensing, external monitoring components such as large, lossy sense resistors are eliminated, reducing system power loss, complexity and system cost. Offering the maximum benefits of GaN’s superior performance and switching speed alongside the highest level of protection and sensing, GaNFast ICs can be confidently used in higher power applications with stringent regulations for efficiency and reliability, such as solar inverters, motor drives, server power, and EV Onboard Chargers (OBC) and DC-DC systems. As of March 2022, with over 40,000,000 shipped and zero reported GaN-related field failures, GaNFast ICs are now offered with an industry-first, 20-year limited warranty. GaNFast integration is a core element as we “Electrify Our […]

EPE 2022 ECCE Conference

Leibniz University Hannover Hannover

GaNFast™ power ICs, use next-generation gallium nitride (GaN) to integrate power, drive, and control to replace legacy silicon chips to enable up to 3x faster charging and 3x more power in half the size and weight for mobile fast chargers, consumer electronics, solar, data centers and EVs, replacing silicon in a market worth over $13B by 2026. Navitas’ next generation of devices – GaNFast with GaNSense™ - now enables even higher efficiency, autonomy, and reliability with precision sensing of system current, voltage and temperature with real-time control and protection. Implementing integrated loss-less current sensing, external monitoring components such as large, lossy sense resistors are eliminated, reducing system power loss, complexity and system cost. Offering the maximum benefits of GaN’s superior performance and switching speed alongside the highest level of protection and sensing, GaNFast ICs can be confidently used in higher power applications with stringent regulations for efficiency and reliability, such as solar inverters, motor drives, server power, and EV Onboard Chargers (OBC) and DC-DC systems. As of March 2022, with over 40,000,000 shipped and zero reported GaN-related field failures, GaNFast ICs are now offered with an industry-first, 20-year limited warranty. GaNFast integration is a core element as we “Electrify Our […]