Latest News
Navitas Produces World’s First Integrated Half-Bridge GaN Power IC
EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor today announced a major technology breakthrough with the introduction of the industry’s first integrated half-bridge Gallium Nitride (GaN) Power IC.
Navitas & World’s first GaN Power ICs at MWC 2017
Navitas AllGaN enables 2x faster charging with the 45W USB-PD Type C mobile adapter. Mobile World Congress is the world’s largest gathering for the mobile industry, organised by the GSMA and held in the Mobile World Capital Barcelona, 27 February - 2 March 2017. Join...
Navitas Semiconductor Delivers the World’s First GaN Power ICs
EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today announced the immediate availability of production qualified iDrive™ Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN™ technology.
Navitas Semiconductor – World’s First GaN Power IC – Yole Développement
A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and…
Navitas GaN Power ICs at CES 2017
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world's first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
Navitas Semiconductor CEO Keynote Presenter at Prestigious IEEE Event
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
IEEE Xplore
Front cover and technical article in IEEE's Xplore journal "Monolithic HV GaN Power ICs: Performance and Application." Article: IEEE Xplore September 2016 (requires IEEE log-in)
LTSPICE & SIMetrix – UPDATE
Models now available for 650V NV6105 (integrated GaN Power IC). File formats .asy and .cir sent as email attachments.
PCIM Shanghai Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Shanghai "Driving For Zero Switching Loss Power Solutions." Conference Details • Presentation
PCIM Europe Keynote
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg "Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead." Press Release • Conference Details • Presentation
PSMA Power Technology Roadmap
Stephen Oliver (VP Marketing & Sales) presented “GaN Power ICs and the High Frequency Eco-System." Press Release • Presentation
Navitas – World’s First GaN Power ICs Leave Silicon Behind
First public announcement of AllGaN platform. Press Release • APEC keynote • IEEE TV
APEC 2016 – Select Live Demonstrations
Navitas will again host select customers in a private demonstration suite at APEC. Please contact [email protected] to book a review.
APEC 2016 – March 21st 2016, Long Beach, CA
Dan Kinzer (CTO) honored to be Plenary Speaker at APEC 2016, with presentation titled "Breaking Speed Limits with GaN Power ICs”.
Single iDrive GaN Power ICs – Samples Available
NV6105, NV6110 single iDrive GaN Power ICs available as samples. Please contact [email protected] for more information.
200kHz to 40MHz – Demonstration boards available
Please refer to Technical Library page for the listing of boost, half-bridge and Phi-2 demonstration boards featuring high performance Navitas GaN FETs.