by Navitas | Mar 8, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas将在2017年APEC公布重要的氮化镓(GaN)功率IC消息 Industry-first GaN Power ICs set a new standard in high-density, high-efficiency converters. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor announced today...
by Navitas | Feb 22, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] English Translation: Navitas Produces World’s First Integrated Half-Bridge GaN Power IC AllGaN™集成技术解决了电力电子30年来在高速高压方面的挑战 加利福尼亚州埃尔塞贡多EL SEGUNDO, Calif.–(PRWeb)—Navitas...
by Navitas | Feb 21, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC Unprecedented AllGaN™ integration solves 30-year industry challenge in high-speed, high-voltage power electronics. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor...
by Navitas | Feb 7, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
by Navitas | Nov 2, 2016 | Latest-News, Press-Releases
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
by Navitas | May 10, 2016 | Latest-News, Press-Releases
Dan Kinzer (CTO) presents opening keynote at PCIM in Nuremberg “Welcome to the Post-Silicon World: Wide Band Gap Powers Ahead.” Press Release • Conference Details • Presentation
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