by Navitas | Feb 21, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 推出业界首个集成半桥氮化镓 (GaN) 功率 IC Unprecedented AllGaN™ integration solves 30-year industry challenge in high-speed, high-voltage power electronics. EL SEGUNDO, Calif.–(PRWeb)–Navitas Semiconductor...
by Navitas | Feb 17, 2017 | Latest-News
Navitas AllGaN enables 2x faster charging with the 45W USB-PD Type C mobile adapter. Mobile World Congress is the world’s largest gathering for the mobile industry, organised by the GSMA and held in the Mobile World Capital Barcelona, 27 February – 2 March 2017....
by Navitas | Feb 7, 2017 | Latest-News, Press-Releases
[vc_row][vc_column][vc_column_text] Chinese Translation: Navitas 开始生产氮化镓(GaN)功率 IC Production qualification of 650V AllGaN™ Power ICs enables a high-speed revolution in power electronics. EL SEGUNDO, California USA – (PRWeb) – Navitas Semiconductor today...
by Navitas | Jan 31, 2017 | Latest-News
[vc_row][vc_column][vc_column_text]A new report confirms Navitas AllGaN™ as the leading technology to challenge $15B power silicon market. For power electronics applications, wide bandgap (WBG)-based technologies (particularly silicon carbide (SiC) and gallium nitride...
by Navitas | Jan 2, 2017 | Latest-News
Meet us at CES 2017 in Las Vegas (January 5th-6th) to learn more about the world’s first GaN Power ICs. Fast-forward to a next generation of power and contact [email protected].
by Navitas | Nov 2, 2016 | Latest-News, Press-Releases
Navitas Semiconductor today announced CEO Gene Sheridan will present the advantages of the world’s first Gallium Nitride (GaN) Power ICs, using its proprietary AllGaN™ technology at the upcoming IEEE Power Electronics Society 4th IEEE Workshop on Wide Bandgap Power...
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