by Navitas | Feb 17, 2017 | In the Media
Integrated GaN Power IC building blocks enable fast-switching topologies with simple “digital-in, power-out” capability. In power conversion, fast switching combined with high efficiency enables small size, low weight, and lower system cost. To achieve this, we need...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor’s iDrive Gallium Nitride (GaN) Power ICs use the company’s proprietary AllGaN technology, enabling up to 100x higher frequencies than silicon. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with increasing...
by Navitas | Feb 12, 2017 | In the Media
Navitas Semiconductor today announced the immediate availability of production qualified iDrive Gallium Nitride (GaN) Power ICs using the company’s proprietary AllGaN technology. The NV6131, NV6105 & NV6115 offer a high-efficiency 650V, 160mOhm power FET with...
by Navitas | Feb 12, 2017 | In the Media
“GaN has the potential to displace a large percentage of the $15bn power silicon market, but adoption has been partially limited by the system challenges in cost-effectively driving and controlling the GaN power device at high speeds,” notes power...
Recent Comments