by Navitas | Jan 14, 2022 | Front Page, In the News, IR CN, IR Financial, Latest News, Press Releases CN
下一代氮化镓功率芯片将加速充电更快，驾驶距离更远的电动汽车普及提前三年来到，并减少20%道路二氧化碳排放 2022年1月14日，北京—— 氮化镓 (GaN) 功率芯片的行业领导者 Navitas Semiconductor（纳斯达克代码：NVTS）宣布开设新的电动汽车 (EV) 设计中心，进一步扩展到更高功率的氮化镓市场。与传统的硅解决方案相比，基于氮化镓的车载充电器 (OBC) 的充电速度估计快 3 倍，节能高达 70%。据估计，氮化镓OBC、DC-DC 转换器和牵引逆变器将有望延长电动汽车续航里程，或将电池成本降低...
by Navitas | Jan 13, 2022 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
CTO highlights next-gen GaN ICs to power EVs, solar, datacenter and save up to 2.6 Gtons / year of CO2 emissions El Segundo, CA – January 13th, 2022 Navitas Semiconductor (Nasdaq:NVTS), the industry-leader in GaN power ICs has announced its participation in...
by Navitas | Jan 7, 2022 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
Navitas and Powerland partner to deliver world’s thinnest, lightest 50W GaNFast charger El Segundo, California: January 7th, 2022: Navitas Semiconductor announced today that its GaNFast™ gallium nitride (GaN) ICs power OPPO’s new 50W ultra-thin and ultra-fast ‘League...
by Navitas | Jan 4, 2022 | CES2022, Front-Page, IR, IR-Financial, Latest-News, Press-Releases
Next-gen GaN power IC upgrade enables faster charging, longer range and accelerates EV adoption by 3 years, saving 20% road-sector CO2 emissions El Segundo, CA – January 4th, 2022— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
by Navitas | Dec 31, 2021 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
CEO Gene Sheridan to highlight performance and environmental benefits of next-gen GaN power ICs in EV, solar and data center markets El Segundo, CA – December 31st, 2021— Navitas Semiconductor (Nasdaq: NVTS), the industry-leader in gallium nitride (GaN)...
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