by Navitas | Nov 4, 2022 | Front Page, IR CN, Latest News, Press Releases CN
1场主题演讲，3场工业报告，GaNSense™半桥+GeneSiC™国内首亮相，GaN+SiC双擎引领下一代半导体发展 2022年10月31日——加利福尼亚州托伦斯讯，唯一全面专注的下一代功率半导体公司及氮化镓功率芯片行业领导者——纳微半导体（纳斯达克股票代码：NVTS），今日宣布即将参加2022年11月4日-7日于厦门·湖里区·佰翔五通酒店召开的2022中国电力电子与能量转换大会暨中国电源学会第二十五届学术年会及展览会（以下简称：CPEEC & CPSSC 2022）。 由中国电源学会主办，CPEEC &...
by Navitas | Nov 3, 2022 | EV PR, Front-Page, IR, Latest-News, Press-Releases
New lab accelerates development of advanced EV high-voltage applications using Navitas’ GaNFast™ and GeneSiC™ power semiconductors Torrance, CA – November 3rd, 2022—Navitas Semiconductor (Nasdaq: NVTS), the only pure-play, next-generation power semiconductor...
by Navitas | Nov 2, 2022 | Front-Page, In the Media, Latest-News, Short post
Traditional Silicon high voltage power MOSFETs have maximum voltage ratings that include maximum allowable avalanche energy levels. Avalanche breakdown limits the robustness and reliability of the power MOSFET due to the rapid and uncontrolled increase in current and...
by Navitas | Nov 1, 2022 | Front-Page, IR, IR-Financial, Latest-News, Press-Releases
Torrance, CA – November 1st, 2022— Navitas Semiconductor (Nasdaq: NVTS), the pure-play, industry leader in next-generation power semiconductors, today announced that it will report third quarter 2022 financial results after the market close on Wednesday, November...
by Navitas | Nov 1, 2022 | Front-Page, In the Media, Industrial Motor News, Latest-News, Short post
Gallium nitride (GaN) is a wide-bandgap semiconductor which offers superior characteristics compared to older silicon equivalents, including the ability to switch up to 20x faster and increase power density by over 3x times. Implementing GaN power devices into a...
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