by Navitas | Jan 28, 2026 | Front-Page, IR, IR Financial, IR-Financial, Latest-News, Press-Releases
TORRANCE, Calif., Jan. 28, 2026 – Navitas Semiconductor, (Nasdaq: NVTS) today announced that it will report fourth quarter and full year 2025 financial results on Tuesday, February 24, 2026, after the market close. Navitas’ President and CEO, Chris Allexandre, and...
by Navitas | Jan 7, 2026 | Front-Page, IR, IR Financial, IR-Financial, Latest-News, Press-Releases
TORRANCE, Calif. , Jan. 7, 2026 – Navitas Semiconductor, an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the 28th Annual Needham Growth...
by Navitas | Dec 17, 2025 | Front-Page, In the Media, Latest-News, Short post
Join Navitas and Cyient as they present on NDTV Profit discussing plans to accelerate GaN adoption in India – a move that could transform the country’s EV, data center, and power technology landscape. Watch Here Read...
by Navitas | Dec 11, 2025 | Front-Page, IR, IR Financial, IR-Financial, Latest-News, Press-Releases
Navitas expands globally with Avnet building on its existing Avnet Silica (Europe) relationship, to support high-growth high-power markets such as AI data centers, performance computing, energy and grid infrastructure and industrial electrification TORRANCE, CA –...
by Navitas | Dec 8, 2025 | IR CN, IR Financial, Latest News, Press Releases CN
全新发布的3300V / 2300V GeneSiC™ 碳化硅产品基于最新沟槽辅助平面栅技术 Trench-Assisted Planar（TAP）与先进封装，实现 AI 数据中心、电网与能源基础设施及工业电气化系统的更高效率与更长寿命，包括储能、可再生能源与兆瓦级快充等关键应用 美国加州托伦斯 — 2025 年 12 月 1 日 — 下一代 GaNFast™ 氮化镓（GaN）与 GeneSiC™ 碳化硅（SiC）功率半导体行业领导者纳微半导体（Nasdaq：NVTS） 今日宣布，其全新 3300V 与 2300V...
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