by Navitas | Jan 21, 2019 | In the Media, Latest-News
It has been proven many times that GaN has a significant potential in replacing Si in many power switching applications. As reported in “Power GaN 2018: Epitaxy, Devices, Applications and Technology Trends” from Yole Développement (Yole), even if GaN currently still...
by Navitas | Dec 28, 2018 | Awards, In the Media, Press-Releases
EE Times ‘Silicon 60’ ranks Navitas, the GaNFast™ Power IC leader, as 2018 top startup EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today its selection to the prestigious 2018 Electronic Engineering Times ‘Silicon 60’ startup ranking. Navitas...
by Navitas | Dec 4, 2018 | Latest-News, Press-Releases
GaNFast™ Power ICs Reach Mainstream Consumer Adoption and Expand in to IoT, Data Centers, EV and Beyond EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today that it will showcase the world’s leading GaNFast™ power IC technology, in addition to the...
by Navitas | Oct 23, 2018 | In the Media, Latest-News
For the past few decades, the transformer has been the workhorse of power electronics. It has been a critical, enabling, dependable ingredient to safely transform power from the grid in its raw AC (alternating current) form into usable DC (direct current) to power...
by Navitas | Oct 1, 2018 | Latest-News, Press-Releases
Navitas Drives China’s Growing Production of GaNFast™ Chargers and Adapters EL SEGUNDO, Calif.–(PRWeb)— Navitas Semiconductor announced today that the company will be a diamond sponsor for IEEE PEAC’2018, the 2nd International Power Electronics and Applications...
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