by Navitas | Aug 12, 2020 | Front-Page, Latest-News
Navitas, as a specialist in the field of gallium nitride (GaN) for power electronics, is here to break the speed limits imposed on us by legacy silicon (Si) devices. The low switching frequencies in today’s electronics mean bulky, heavy and expensive magnetics,...
by Navitas | Aug 12, 2020 | Front-Page, Latest-News
GaNFast™ power ICs are game-changers in the world of device charging. GaN-based fast chargers provide 3x more power, so charge 3x faster in half the size and weight of old, slow silicon-chip-based chargers. GaN power ICs integrate GaN power, GaN analog and GaN logic...
by Navitas | Aug 10, 2020 | Latest-News
OPPO’s “50W Mini SuperVOOC” fast charger, announced on July 15th 2020, uses Navitas’ high-speed GaNFast power ICs to enable a new ‘pulsed’ power conversion topology and achieve the world’s smallest and thinnest form-factor. Measuring only 82.2 x 39.0 x 10.5 mm (34 cc)...
by Navitas | Aug 10, 2020 | Front-Page, Latest-News, Press-Releases
Next-generation gallium nitride technology from Navitas enables over 30% shrink vs. standard Apple charger IRVINE, CALIFORNIA and DUBLIN, IRELAND –(PRWeb)– Spigen Inc. and Navitas Semiconductor today announced a new 20W GaN wall charger, the Spigen...
by Navitas | Aug 4, 2020 | Front-Page, Latest-News, Press-Releases
GaN: Next-generation semiconductor material takes market share from old, slow silicon chips DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor announced today that OPPO, the world’s leading fast-charge phone company had adopted its gallium nitride (GaNFast™) power...
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