by Navitas | Feb 3, 2021 | Front-Page, Latest-News
How GaNFast power ICs powered by Gallium Nitride (GaN) deliver ultimate power density in Active-Clamp Flyback (ACF) fast chargers. Read Here ...
by Navitas | Feb 2, 2021 | Awards, Front-Page, IR, Latest-News, Press-Releases
Gallium nitride (GaN) continues to ramp into $20B silicon chip market DUBLIN, Ireland — (PRWeb) Navitas Semiconductor today announced they have been awarded ASPENCORE’s Electronic Products’ “Power Product of the Year” 2020. Navitas’ GaN Power IC NV612x series...
by Navitas | Jan 27, 2021 | Front-Page, Latest-News
Apsencore Guide to Gallium Nitride edited by Maurizio Di Paolo Emilio and Nitin Dahad As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide...
by Navitas | Jan 26, 2021 | Front Page, In the News, Latest News, Press Releases, Press Releases CN
纳微氮化镓充电器获CES创新大奖，迅速扩张，抢占200亿美金硅功率半导体市场 爱尔兰，都柏林 -（PRWeb)，纳微半导体（ Navitas Semiconductor ）正式宣布，其出货量创下最新纪录，已向市场成功交付超过1300万颗氮化镓（GaN）功率IC，实现产品零故障，反应了全球移动消费电子市场正加速采用氮化镓芯片，实现移动设备和相关设备的快速充电。...
by Navitas | Jan 26, 2021 | Front-Page, IR, Latest-News, Press-Releases
CES award-winning Gallium nitride (GaN) semiconductor ramps quickly into the $20B silicon chip market DUBLIN, Ireland — (PRWeb) Navitas Semiconductor announced that over 13,000,000 of its gallium nitride (GaN) power ICs have been shipped to date with zero...
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