by Navitas | Apr 23, 2021 | Front Page, In the News, Latest News, Press Releases, Press Releases CN
氮化镓代替硅器件，全新纳微GaNFast技术进军大功率工业应用领域 DUBLIN, IRELAND —(PRWeb) 纳微半导体宣布，在为期三天的2021年慕尼黑上海电子展上，成功完成一系列GaNFast™ 大功率氮化镓工业应用首秀。 氮化镓（GaN）是第三代半导体技术，其运行速度比旧的慢速硅（Si）快20倍，并且能够以三分之一的体积和重量，实现高达三倍的功率或充电速度。纳微GaNFast氮化镓功率芯片集成了GaN器件，驱动器以及保护和控制功能，可提供最简单，最小，最快的电源解决方案，如今更高的电源性能！...
by Navitas | Apr 23, 2021 | Front-Page, Latest-News, Press-Releases
New GaNFast™ technology expands into higher power industrial applications to replace old, slow silicon chips. DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor today reported the successful debut of GaNFast™ power ICs in a wide range of industrial applications at...
by Navitas | Apr 14, 2021 | Front-Page, Latest-News
Our NV6128 has been selected as Bodo’s Power Systems Product of the Month: a high power 650V/800V-rated GaNFast Power IC to address the high-power mobile and consumer power electronics market. The 70 mOhm NV6128 represents a 66% increase in current capability,...
by Navitas | Apr 12, 2021 | Front-Page, Latest-News, Press-Releases
Gallium nitride (GaN) power ICs capture more of the $20B silicon market. DUBLIN, IRELAND –(PRWeb)— Navitas Semiconductor today announced that Spigen Inc. has extended its range of ‘ArcStation Pro’ GaN-based fast chargers, now including the world’s smallest 45W...
by Navitas | Mar 25, 2021 | Front-Page, Latest-News
40 years after the silicon bipolar junction transistor gave way to the switching silicon MOSFET, we are seeing the ‘second revolution’ in power electronics, with gallium nitride (GaN) as the enabling catalyst. Smartphone screens, batteries and increased 5G features...
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